Plasma source for semiconductor processing

ABSTRACT

The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. Non-Provisional Pat.Application No. 16/937,106, filed Jul. 23, 2020, the content of which ishereby incorporated by reference in its entirety for all purposes.

TECHNICAL FIELD

The present technology relates to semiconductor systems, processes, andequipment. More specifically, the present technology relates to plasmasources incorporated in semiconductor processing chambers and utilizedin semiconductor processing.

BACKGROUND

Many substrate processing systems use a plasma generation source duringsemiconductor substrate processing. Plasma sources are utilized inprocessing to develop radical effluents that may facilitate deposition,etching, and cleaning, among other operations in semiconductorprocessing. Plasma sources are often confined within a particularoperational regime, which may be limited by power, chamber pressure, orany number of other aspects of semiconductor processing. Althoughdifferent sources operating on various principles, including microwaveexcitation and capacitive or inductive coupling, may provide a number ofdifferent performance benefits, each of these systems may be limited inone or more ways. As semiconductor processing includes more complicatedoperations requiring more precise uniformity, many conventional plasmasources may be incapable of producing desirable outcomes.

Thus, there is a need for improved systems, components, and methods thatcan be used to improve semiconductor processing outcomes and uniformity.These and other needs are addressed by the present technology.

SUMMARY

The present technology encompasses plasma sources including a firstplate defining a first plurality of apertures arranged in a first set ofrows. The first plate may include a first set of electrodes. Eachelectrode of the first set of electrodes may extend along a separate rowof the first set of rows. The plasma sources may include a second platedefining a second plurality of apertures arranged in a second set ofrows. The second plate may include a second set of electrodes. Eachelectrode of the second set of electrodes may extend along a separaterow of the second set of rows. Each aperture of the second plurality ofapertures may be axially aligned with an aperture of the first pluralityof apertures. The plasma sources may include a third plate positionedbetween the first plate and the second plate. The third plate may definea third plurality of apertures. Each aperture of the third plurality ofapertures may be axially aligned with an aperture of the first pluralityof apertures and an aperture of the second plurality of apertures.

In some embodiments, each axially aligned aperture of the firstplurality of apertures, aperture of the second plurality of apertures,and aperture of the third plurality of apertures may form a plasma cellextending through the plasma source. The sources may include a firstpower supply electrically coupled with each electrode of the first setof electrodes. The first power supply may be configured to deliver afirst voltage along each electrode of the first set of electrodes. Thesources may include a second power supply electrically coupled with eachelectrode of the second set of electrodes. The second power supply maybe configured to deliver a second voltage along each electrode of thesecond set of electrodes. The first power supply and the second powersupply may be configured to produce an electrical discharge within aplasma cell positioned at an overlapping electrode of the first set ofelectrodes and an electrode of the second set of electrodes eachreceiving power. Each aperture of the first plurality of apertures maybe characterized by a first diameter, and each aperture of the thirdplurality of apertures may be characterized by a second diameterdifferent from the first diameter. Each electrode of the first set ofelectrodes may be maintained electrically isolated from each otherelectrode of the first set of electrodes along a surface of the firstplate. Each electrode of the first set of electrodes may extend along afirst surface of the first plate. Each electrode of the first set ofelectrodes may further extend along sidewalls of each aperture of thefirst plurality of apertures intersected by an associated electrode. Thesources may include a layer of dielectric material overlying electrodematerial extending along sidewalls of each aperture of the firstplurality of apertures.

Some embodiments of the present technology may encompass semiconductorprocessing chambers. The chambers may include a substrate supportconfigured to support a substrate for processing, and at least partiallydefining a processing region from below. The chambers may include aplasma source positioned within the semiconductor processing chamber.The plasma source may include a first plate defining a first aperture.The plasma source may include a first electrode extending across asurface of the first plate and intersecting the first aperture. Theplasma source may include a second plate defining a second aperture, andthe second aperture may be coaxial with the first aperture. The plasmasource may include a second electrode extending across a surface of thesecond plate and intersecting the second aperture. The second electrodemay extend perpendicular to the first electrode. The plasma source mayinclude a third plate positioned between the first plate and the secondplate. The third plate may define a third aperture coaxial with thefirst aperture and the second aperture to form a channel through theplasma source.

In some embodiments, the first electrode may extend about a sidewall ofthe first aperture, and the second electrode may extend about a sidewallof the second aperture. The chambers may include a first power supplyconfigured to deliver a first voltage along the first electrode. Thechambers may include a second power supply configured to deliver asecond voltage along the second electrode. The chambers may include afirst dielectric material overlying a portion of the first electrodeextending about the sidewall of the first aperture. The chambers mayinclude a second dielectric material overlying a portion of the secondelectrode extending about the sidewall of the second aperture. The firstaperture may be characterized by a first diameter, and the thirdaperture may be characterized by a second diameter different from thefirst diameter. The plasma source may at least partially define theprocessing region from above. The first aperture may be an aperture of afirst plurality of apertures. The first electrode may be an electrode ofa first plurality of electrodes. Each aperture of the first plurality ofapertures may be intersected by an electrode of the first plurality ofelectrodes.

Some embodiments of the present technology may encompass methods ofsemiconductor processing. The methods may include delivering a precursorto a semiconductor processing chamber. The semiconductor processingchamber may have a plasma source including a first plate defining afirst aperture. The plasma source may include a first electrodeextending across a surface of the first plate and intersecting the firstaperture. The plasma source may include a second plate defining a secondaperture. The second aperture may be coaxial with the first aperture.The plasma source may include a second electrode extending across asurface of the second plate and intersecting the second aperture. Thesecond electrode may extend perpendicular to the first electrode. Theplasma source may include a third plate positioned between the firstplate and the second plate. The third plate may define a third aperturecoaxial with the first aperture and the second aperture to form achannel through the plasma source. The plasma source may include a firstpower supply configured to deliver a first voltage along the firstelectrode. The plasma source may include a second power supplyconfigured to deliver a second voltage along the second electrode. Themethods may include providing the first voltage along the firstelectrode. The methods may include forming a plasma of the precursorwithin the channel through the plasma source.

In some embodiments, the methods may include, prior to delivering theprecursor providing the first voltage along the first electrode. Themethods may include providing the second voltage along the secondelectrode to produce a memory charge at the channel through the plasmasource. The first electrode may extend about a sidewall of the firstaperture. The second electrode may extend about a sidewall of the secondaperture. The plasma source may also include a first dielectric materialoverlying a portion of the first electrode extending about the sidewallof the first aperture. The plasma source may also include a seconddielectric material overlying a portion of the second electrodeextending about the sidewall of the second aperture. A breakdown voltagewithin the channel formed through the plasma source may be less than orabout 500 V.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, plasma sources according to embodiments ofthe present technology may operate over a broader pressure regime thanconventional sources. Additionally, the sources may be operated toimprove in situ uniformity of operations performed on a semiconductorsubstrate. These and other embodiments, along with many of theiradvantages and features, are described in more detail in conjunctionwith the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a schematic top view of an exemplary processing systemaccording to some embodiments of the present technology.

FIG. 2 shows a schematic cross-sectional view of an exemplary processingsystem according to some embodiments of the present technology.

FIG. 3 shows a schematic partial cross-sectional view of an exemplaryprocessing chamber according to some embodiments of the presenttechnology.

FIG. 4 shows a schematic top view of an exemplary plasma sourceaccording to some embodiments of the present technology.

FIG. 5 shows a schematic partial cross-sectional view of an exemplaryplasma source through line A-A of FIG. 4 according to some embodimentsof the present technology.

FIG. 6 shows a schematic cross-sectional view of an exemplary plasmasource according to some embodiments of the present technology.

FIG. 7 shows a schematic top view through an exemplary cell of a plasmasource according to some embodiments of the present technology.

FIG. 8 shows a schematic cross-sectional view of an exemplary plasmasource according to some embodiments of the present technology.

FIG. 9 shows selected operations in a method of processing asemiconductor substrate according to some embodiments of the presenttechnology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

Plasma used in semiconductor processing is often limited to a particularpressure range, which typically extends from a few mTorr unto a fewTorr, such as below 20 Torr. As device architecture becomes moreintricate, higher pressure plasma may enable improved operationalcapabilities. However, conventional sources are limited to discreteranges of pressure, and often cannot extend source generation to higherpressures. Additionally, when pressure is increased, process uniformitymay be challenged. This may be due to the fact that many conventionalplasma sources include one or two antennas, which may not be capable todistribute species uniformly over a substrate at higher pressure wherediffusion may be slowed. While some conventional plasma sourcesoperating at relatively low pressure, such as a few Torr, may utilize agrid to neutralize ions, this device as an attempt to improve plasmauniformity is limited to minimal non-uniformity of plasma products abovethe grid.

The present technology encompasses plasma sources compatible with avariety of chamber architectures, and which may be capable of sustainingplasma from below 1 Torr up to 50 Torr or greater with a configurationthat can be scaled to virtually any substrate size. The plasma sourcesmay include hundreds or thousands of individual plasma sources assembledin a plane so that incoming process precursors may pass through theindividual cells where the precursors may be energized at each location.The sources may be driven from one or more RF generators for acapacitive coupled plasma discharge version as well as from a lowfrequency, square wave AC generator for a dielectric barrier dischargeversion. This may afford control of discharge in every individual cellusing addressing for controlling the average power applied to each cell.

The present technology overcomes many conventional issues by utilizing aplasma source operating on dielectric barrier discharge formed in one ormore cells formed through the plasma source. By controlling electrodedistances along the plasma source, voltage may be reduced compared to anumber of conventional plasma sources, which may extend the pressureoperating window of exemplary sources. Additionally, by producing anumber of independently operated plasma cells through the source,on-wafer characteristics may be adjusted in situ, and in a feed-forwardprocesses where results of a processing operation may be utilized tomodify plasma generation through the source, without requiringadjustments to the plasma source itself. For example, while manyconventional plasma sources may adjust aperture diameters to increase ordecrease effects at the substrate level for a specific semiconductorprocess, the present technology can modify plasma pulsing through anynumber of plasma cells to modify any variety of processes beingperformed.

The rate of energy transfer to electrons and plasma generation rate maydepend on reduced electric field in the gas, which may be inverselyrelated to gas pressure. Accordingly, overall balance conditions,including voltage, may depend on the product of pressure and plasmacharacteristic size. However, at smaller and larger pressures, plasmamay be more difficult to sustain, and may therefore require increasedvoltages. Hence, to operate plasma at high pressure, the presenttechnology may significantly reduce the size of the source by utilizinga number of small, interconnected sources instead of one.Advantageously, these individual sources may be individually controlled.Replacement of one larger source with a larger number of small sourcesmay also simplify the chamber architecture and reduce the number ofpossible controlling elements used to achieve higher process uniformity.

The concept of a basic element or mini-source of the present technologymay be based on a simple cylindrical design that may be used for both RFcapacitively-coupled plasma operation and dielectric barrier dischargeoperation as will be described further below. The arrangement of theindividual cells may enable plasma contamination to be avoided with theelectrode material. When power is applied to the electrodes of thesource, discharge conditions may be satisfied inside the channel, whichmay allow plasma generation, while limiting or preventing plasmageneration externally to the individual channels formed.

The individual sources may be arranged in a grid-like configuration withall top electrodes connected together and all bottom electrodesconnected together with a spacer filling a space between top and bottomelectrodes so precursors may only flow through the individual cells anddischarge can be controlled to occur inside the cells. The sources maybe made in any number of ways. For example, in some embodiments theindividual electrodes of either the top or bottom electrode may be madeof a single plate of conductive material with holes for the channels,and the spacer between them defining the gap size, along with protectiveplates on a top and bottom side of the source as will be describedbelow. A surface of each hole may be coated with dielectric, which maybe deposited, inserted as a tube, to limit discharge outside of thechannels. Cooling may also be applied in any number of ways, such as,for example, by adjusting thickness and coupling of the electrode plateswith cooled portions of the chamber body.

The electrodes may be included as plates or deposited as films in anumber of ways, which may provide a number of connection benefits. Forexample, depositing conductive films on a dielectric plate to produceelectrodes for cells inside the holes and connecting them may provide anopportunity to connected the cell electrodes in lines, such as scanelectrodes, and the second electrodes, such as bulk electrodes, may beconnected all together. This may allow all bulk electrodes to beconnected to one terminal of the power supply and scan electrodes to theother terminal of the power supply through a control board, which mayallow all scan lines to be connected simultaneously affording uniformplasma generation or allowing only some lines to generate discharge.Additionally, the both top and bottom electrodes may be formed in linesextending perpendicular to one another, which may allow plasmageneration not only along individual lines, but also in individual cellswith addressing of any selection of cells across the source whenapplying power to all cells together. In one non-limiting example, eachcell may include three electrodes, including a bulk, scan, andaddressing electrode next to the scan electrode, along with additionaldielectric layers separating the electrodes. The bulk electrodes may allbe connected together while the scan and addressing electrodes may runperpendicular to one another. As will be explained below, the addressingelectrode may be used for addressing alone, while the bulk and scanelectrodes may be used for both sustaining and resetting each cell priorto addressing.

The cells may all be operated independently of each other cell, andminor penetration of particles between cells may not impact dischargeconditions within the cell. Communication between the cells may belimited to the applied voltage. In operation, the electrodes may beconnected to produce a capacitively-coupled source or a dielectricbarrier discharge. As a capacitively-coupled plasma source, the top andbottom electrodes can be driven by a single RF generator and match whenall top electrodes are connected together and all bottom electrodes areconnected together. Additionally, electrodes in the scan lines, forexample, may be connected to a common RF source or match throughcontrolled switches. Since the power deposited in each cell may be thesame, and thus the power required to drive a fraction of the source maybe proportional to that fraction, the switch controller may have afeedback to the RF power generator that may automatically decrease thepower when some lines are disconnected. The power in any cell may becontrolled by the RF generator output voltage.

For dielectric barrier discharge, a single polarity high voltage may beapplied to the gap at each cell for a period of time during whichdischarge ignites, develops, and extinguishes, leaving a “memory” chargeon the dielectric walls of the cell, which compensates the electricfield from voltages applied to electrodes. The next pulse within eachcell occurs when the voltage to the cell, like a pixel, is reversed.Memory charge may allow plasma to be generated. When the driving voltageis reversed, a combination of the driving and memory charge inducedvoltages may double that of the driving voltage itself. Hence, by usingthe magnitude of the driving voltage to be lower than the cell breakdownvoltage, while the net voltage across any cell with memory charge issignificantly higher than the breakdown voltage, may allow driving thesource with some cells generating plasma, while others without a memorycharge fail to ignite. The source may be driven with a square waveformfrom a single voltage DC power supply and controlled switches, which mayconnect alternatively each electrode to ground or a voltage terminal.For sources with two bulk electrodes or with one bulk and one set ofscan line electrodes, which may not include addressing, a relativelysimple driving scheme may be utilized. For example, a line of switchesmay be connected to the power supply at one terminal and with all or aselect number of lines. The bulk electrode may be connected to the otherterminal of the power supply. The power supply may be operated with afew levels of sustain voltages, and placing an initial memory charge canbe applied to all cells initially before applying a higher voltage for asustain operation, where a single pulse of voltage from a higher levelof sustain voltage may be applied, or another voltage above the initialvoltage may be applied specifically to address cells. Additionally, agas pressure or change in gas may be used to initiate a single pulse,and the memory charge may not change when the pressure or gas arechanged.

Dielectric barrier discharge may be a pulsing discharge where itextinguishes every half cycle, which allows different power control forma capacitively coupled plasma. In each discharge pulse, energy depositedin the cell may be proportional to the square of voltage times thecapacitance of the cell electrodes, and thus if the amplitude of thevoltage applied stays constant, the energy in every pulse may be thesame. Control of the power in each cell may then be controlled by apulse frequency, and total energy generated in any cell during theprocess may be controlled by the total number of pulses. Since the powersupply may operate at a fixed voltage, there may not be a need for afeedback between the switches and the power supply like in acapacitively coupled plasma version.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable to avariety of other processes as may occur in the described chambers. Forexample, plasma sources encompassed by the present technology may beapplicable to deposition, etching, and cleaning chambers operating at avariety of conditions and performing any number of plasma processes.Accordingly, the technology should not be considered to be so limited asfor use with the described processes alone. The disclosure will discussone possible system and chamber in which the present technology may beincorporated before describing sources and methods or operations ofexemplary process sequences according to some embodiments of the presenttechnology. It is to be understood that the technology is not limited tothe equipment described, and processes discussed may be performed in anynumber of processing chambers and systems.

FIG. 1 shows a top plan view of one embodiment of a processing system 10of deposition, etching, baking, and/or curing chambers according toembodiments. The tool or processing system 10 depicted in FIG. 1 maycontain a plurality of process chambers, 24 a-d, a transfer chamber 20,a service chamber 26, an integrated metrology chamber 28, and a pair ofload lock chambers 16 a-b. The process chambers may include any numberof structures or components, as well as any number or combination ofprocessing chambers. For example, any one or more processing chambersperforming any number of etching, deposition, or other processes mayincorporate one or more aspects of plasma sources discussed throughoutthis disclosure.

To transport substrates among the chambers, the transfer chamber 20 maycontain a robotic transport mechanism 22. The transport mechanism 22 mayhave a pair of substrate transport blades 22 a attached to the distalends of extendible arms 22 b, respectively. The blades 22 a may be usedfor carrying individual substrates to and from the process chambers. Inoperation, one of the substrate transport blades such as blade 22 a ofthe transport mechanism 22 may retrieve a substrate W from one of theload lock chambers such as chambers 16 a-b and carry substrate W to afirst stage of processing, for example, a treatment process as describedbelow in chambers 24 a-d. The chambers may be included to performindividual or combined operations of the described technology. Forexample, while one or more chambers may be configured to perform adeposition or etching operation, one or more other chambers may beconfigured to perform a pre-treatment operation and/or one or morepost-treatment operations described. Any number of configurations areencompassed by the present technology, which may also perform any numberof additional fabrication operations typically performed insemiconductor processing.

If the chamber is occupied, the robot may wait until the processing iscomplete and then remove the processed substrate from the chamber withone blade 22 a and may insert a new substrate with a second blade. Oncethe substrate is processed, it may then be moved to a second stage ofprocessing. For each move, the transport mechanism 22 generally may haveone blade carrying a substrate and one blade empty to execute asubstrate exchange. The transport mechanism 22 may wait at each chamberuntil an exchange can be accomplished.

Once processing is complete within the process chambers, the transportmechanism 22 may move the substrate W from the last process chamber andtransport the substrate W to a cassette within the load lock chambers 16a-b. From the load lock chambers 16 a-b, the substrate may move into afactory interface 12. The factory interface 12 generally may operate totransfer substrates between pod loaders 14 a-d in an atmosphericpressure clean environment and the load lock chambers 16 a-b. The cleanenvironment in factory interface 12 may be generally provided throughair filtration processes, such as HEPA filtration, for example. Factoryinterface 12 may also include a substrate orienter/aligner that may beused to properly align the substrates prior to processing. At least onesubstrate robot, such as robots 18 a-b, may be positioned in factoryinterface 12 to transport substrates between various positions/locationswithin factory interface 12 and to other locations in communicationtherewith. Robots 18 a-b may be configured to travel along a tracksystem within factory interface 12 from a first end to a second end ofthe factory interface 12.

The processing system 10 may further include an integrated metrologychamber 28 to provide control signals, which may provide adaptivecontrol over any of the processes being performed in the processingchambers. The integrated metrology chamber 28 may include any of avariety of metrological devices to measure various film properties, suchas thickness, roughness, composition, and the metrology devices mayfurther be capable of characterizing grating parameters such as criticaldimensions, sidewall angle, and feature height under vacuum in anautomated manner.

Each of processing chambers 24 a-d may be configured to perform one ormore process steps in the fabrication of a semiconductor structure, andany number of processing chambers and combinations of processingchambers may be used on multi-chamber processing system 10. For example,any of the processing chambers may be configured to perform a number ofsubstrate processing operations including any number of depositionprocesses including cyclical layer deposition, atomic layer deposition,chemical vapor deposition, physical vapor deposition, as well as otheroperations including etch, pre-clean, pre-treatment, post-treatment,anneal, plasma processing, degas, orientation, and other substrateprocesses. Some specific processes that may be performed in any of thechambers or in any combination of chambers may be metal deposition,surface cleaning and preparation, thermal annealing such as rapidthermal processing, and plasma processing. Any other processes maysimilarly be performed in specific chambers incorporated intomulti-chamber processing system 10, including any process describedbelow, as would be readily appreciated by the skilled artisan.

FIG. 2 illustrates a schematic cross-sectional view of an exemplaryprocessing chamber 100 according to some embodiments of the presenttechnology. Plasma sources according to embodiments of the presenttechnology may be incorporated in chambers such as chamber 100, as wellas any processing chamber, which may include one or more components asdescribed with chamber 100. Chamber 100 may illustrate a semiconductorprocessing chamber and accessories, which may be one of many chambersthat can be incorporated on system 10 described above. The processingchamber 100 may be used for various plasma processes. In someembodiments, the processing chamber 100 may be used to perform dryetching with one or more etching agents. For example, the processingchamber may be used for ignition of plasma from a precursor includingoxygen-containing precursors, hydrogen-containing precursors,carbon-containing precursors, nitrogen-containing precursors,halogen-containing precursors, or any number of other precursors, whichmay be enhanced and used to remove material from a substrate 101.

The processing chamber 100 may include a chamber body 102, a lidassembly 104, and a support assembly 106. The lid assembly 104 may bepositioned at an upper end of the chamber body 102. The support assembly106 may be housed or at least partially contained within a processingregion of the chamber or an interior volume 108, at least partiallydefined by the chamber body 102, and which may constitute a processingregion of the chamber 100. The chamber body 102 may include a slit valveopening 110 formed or defined in a sidewall thereof. The slit valveopening 110 may be selectively opened and closed to allow access to theprocessing region or interior volume 108 by a substrate handling robot.

The chamber body 102 may further include a liner 112 that may surroundthe support assembly 106. The liner 112 may be removable for servicingand cleaning. The liner 112 may be made of a metal such as aluminum, aceramic material, or any other process compatible material. In someembodiments, the liner 112 may include one or more apertures 114 and apumping channel 116 formed therein, and which may be in fluidcommunication with a vacuum port 118. The apertures 114 may provide aflow path for gases into the pumping channel 116. The pumping channel116 may provide an egress for the gases within the chamber 100 to vacuumport 118. A vacuum system 120 may be coupled with the vacuum port 118.The vacuum system 120 may include a vacuum pump 122 and a throttle valve124. The throttle valve 124 may regulate the flow of gases through thechamber 100. The vacuum pump 122 may be coupled to the vacuum port 118disposed in the interior volume 108.

The lid assembly 104 may include at least two stacked componentsconfigured to form a plasma volume or cavity there between. In someembodiments, the lid assembly 104 may include a first electrode 126 orupper electrode disposed vertically above a second electrode 128 orlower electrode. The first electrode 126 and the second electrode 128may confine a plasma cavity 130, there between. The first electrode 126may be coupled with a power source 132, such as an RF power supply. Thesecond electrode 128 may be connected to ground, forming a capacitivelycoupled region between the two electrodes. The first electrode 126 maydefine or be in fluid communication with a gas inlet 134. One or moregas inlets may be included, and may deliver one or more precursors intothe plasma cavity 130.

The lid assembly 104 may also include an isolator ring 136 that mayelectrically isolate the first electrode 126 from the second electrode128. The isolator ring 136 may be made from aluminum oxide or any otherinsulative, processing compatible material. The lid assembly may alsoinclude a gas distribution plate 138 and a blocker plate 140. The secondelectrode 128, the gas distribution plate 138, and the blocker plate 140may be stacked and disposed on a lid rim 142, which may be coupled withthe chamber body 102.

In some embodiments, the second electrode 128 may include or define aplurality of gas passages or apertures 144 providing egress from theplasma cavity 130 to allow effluents from the plasma cavity 130 to flowtowards the processing region. The gas distribution plate 138 mayinclude or define a plurality of apertures 146 configured to distributethe flow of gases or plasma effluents into the processing region 108 andinto contact with a substrate 101 housed therein. The gas distributionplate 138 may also be a plasma source as will be described furtherbelow, which may be used in lieu of or in addition to the remote plasmasource seated on the chamber as illustrated. The blocker plate 140 mayoptionally be disposed between the second electrode 128 and the gasdistribution plate 138. The blocker plate 140 may include or define aplurality of apertures 148 to provide a plurality of gas passages fromthe second electrode 128 to the gas distribution plate 138, and whichmay provide an amount of lateral or radial distribution of the effluentsor gases.

The support assembly 106 may include a support member 180. The supportmember 180 may be configured to support the substrate 101 forprocessing. The support member 180 may be coupled with a lift mechanism182 through a shaft 184, which may extend through a bottom surface ofthe chamber body 102. The lift mechanism 182 may be flexibly sealed tothe chamber body 102 by a bellows 186 that may prevent vacuum leakagefrom around the shaft 184. The lift mechanism 182 may allow the supportmember 180 to be moved vertically within the chamber body 102 between alower transfer position and a number of raised process positions.Additionally, one or more lift pins 188 may be disposed through thesupport member 180. The one or more lift pins 188 may be configured toextend through the support member 180 such that the substrate 101 may beraised off the surface of the support member 180. The one or more liftpins 188 may be activated by a lift ring 190.

To operate a variety of aspects of the processing chamber, a controller191 may be included in some embodiments. Controller 191 may variouslyinclude a central processing unit 192 and memory 194, which may be ofany kind, and which may be operated by or with any accessory devices196, as may be included in any system described. The memory 194 mayinclude any number of specific instructions for performing one or moreaspects of any method or operation described, or which may be performedin chamber 100, or any other system.

FIG. 3 shows a schematic partial cross-sectional view of an exemplaryprocessing chamber 300 according to some embodiments of the presenttechnology. Processing chamber 300 may illustrate a limitedconfiguration including a plasma source for performing etching,deposition, cleaning, or other semiconductor processing operations. Thefigure may show certain features of processing chambers that can beincluded in any processing chamber, such as gas distribution plate 138as described above. Processing chamber 300 may include any aspect ofsystem 100 described previously, and may illustrate additional detailsof the system as described above, including a plasma source incorporatedwithin a chamber. It is to be understood that the figure is not intendedto limit the present technology in any way, and plasma sources describedbelow may be included in any type of semiconductor or other processingsystem in which plasma generation may be beneficial. Additionally,because of the highly configurable nature of plasma sources according tosome embodiments of the present technology, chamber architecture may begreatly simplified over conventional designs, as the source may beincorporated in virtually any chamber configuration, including basicchamber architectures as illustrated.

Processing chamber 300 may include general aspects of a processingchamber incorporating a plasma source configured to operate bydielectric barrier discharge to produce plasma effluents of precursorsdelivered into the processing chamber. Although any number of additionalcomponents may be incorporated within the processing chamber, includingblocker plates, distributers, heating or cooling components, remoteplasma sources, pumping systems, controllers, or any number of otherfeatures of semiconductor processing chambers. Exemplary processingchambers may include a substrate support 305 and a plasma source 310.Substrate support 305 may be configured to support a substrate 306 forprocessing within a substrate processing region 308. As illustrated,substrate support 305 may at least partially define the substrateprocessing region from below. Substrate support 305 may include anyadditional features including translation and rotation capabilities aspreviously described, as well as a number of incorporated componentsincluding heating or cooling features, and electrodes, such as biasingelectrodes, for example. Substrate support 305 may include any featureof support assembly 106 described above, as well as features of anyother substrate support that may facilitate chucking and/or processingof a substrate 306.

Processing chamber 300 may also include a plasma source 310, which maybe positioned within the processing chamber and may also operate as agas distribution plate for delivering one or more precursors intoprocessing region 308 for contacting substrate 306. Accordingly, in someembodiments, plasma source 310 may at least partially define processingregion 308 from above, and may provide fluid communication into theprocessing region within the processing chamber. For example, one ormore precursors may be delivered through one or more inlets into thechamber as illustrated. As noted above, any number of additionalcomponents may be included to facilitate uniform distribution throughthe chamber, and which may operate as a choke or baffle to facilitateradial and/or lateral distribution of precursors. Plasma source 310 maydefine one or more apertures 312 extending through the source, and whichmay finally distribute precursors for operation on substrate 306, suchas etching or deposition, or other treatment operations, for example.

Plasma source 310 may include one or more electrodes that may beoperated to produce plasma within the apertures 312 defined through theplasma source. As will be explained further below, by utilizing one ormore electrodes, each aperture may operate as a cell that may beoperated independently from any other cell, or may be operated inconjunction across the source. FIG. 4 shows a schematic top view of anexemplary plasma source 310 according to some embodiments of the presenttechnology, and may illustrate a schematic view illustrating somecomponents and configurations of dielectric barrier discharge plasmasources according to some embodiments of the present technology.

Plasma source 310 may include a source substrate 405 through which oneor more, including a plurality, or apertures 410 may be defined. Sourcesubstrate 405 may include one or more plates as will be describedfurther below, and may be characterized by any number of geometries. Forexample, source substrate 405 may be characterized by a rectilineargeometry as illustrated, as well as any elliptical or arcuategeometries, as well as any other geometries that may facilitateincorporation within a substrate processing chamber. Source substrate405 may be or include any number of materials including dielectricmaterials in some embodiments. For example, source substrate 405 may beor include any number of dielectric or ceramic materials, such as one ormore oxide, nitride, or carbide, carbonate, or other base materials. Thematerials may include silicon, carbon, aluminum, sodium, magnesium,tungsten, yttrium, zirconium, or any combination of these or otherelements, such as transition metal elements, which may operate orwithstand a processing environment within a semiconductor processingchamber.

The apertures 410 defined through the plasma source may be arranged inany pattern, which may include a grid of some type as illustrated. Forexample, the apertures in exemplary plasma source 310 may be arrangedabout the circular projection illustrated on the source substrate 405,which may show the location of a substrate positioned downstream of theplasma source, such as substrate 306 described above. The apertures maybe defined in any number of patterns, which may also be rectilinear forassociated substrates, or any other pattern that may afford distributionof precursors to a substrate processing region for interaction with asubstrate being processed. Additionally, although illustrated in an XYgrid pattern based on electrode location as will be described below,additional or alternative distributions may also be utilized includingradial distributions, which may be formed along an r, θ or polarcoordinate system, among any other arrangement of aspects of the plasmasource. The included apertures are not intended to be limiting of anynumber of apertures incorporated within exemplary sources, and which mayextend beyond or within areas corresponding to substrates beingprocessed, or any other arrangement of apertures. Exemplary plasmasources may include one or more apertures through the sources, and mayinclude tens, hundreds, or thousands of apertures defined throughsources of any range of dimensions of substrates for semiconductorprocessing, including from a few hundred millimeters or less, to severalmeters or more. The apertures 410 may be formed to any size or diameter,and may be characterized by a consistent or varying diameter across aplasma source. In some embodiments the apertures 410 may becharacterized by a diameter of less than or about 10 mm, and may becharacterized by a diameter of less than or about 9 mm, less than orabout 8 mm, less than or about 7 mm, less than or about 6 mm, less thanor about 5 mm, less than or about 4 mm, less than or about 3 mm, lessthan or about 2 mm, or less.

Plasma source 310 may also include one or more, including a plurality,of electrodes extending across the source substrate 405, andintersecting one or more apertures 410 defined through the source. Theelectrodes may be operated in embodiments to produce an electricaldischarge within the apertures through the source, and which may producea number of plasma cells through which one or more precursors may bedelivered and plasma enhanced. The electrodes may include a first set ofelectrodes, including one or more first electrodes 415, and a second setof electrodes, including one or more second electrodes 420. The secondelectrodes may be arranged at an angular offset from the firstelectrodes in some embodiments, including being disposed perpendicularto the first electrodes as illustrated. Second electrodes 420 areillustrated in hidden view as the second electrodes may be disposed at adifferent plane through the plasma source from first electrodes 415. Forexample, in some embodiments, although second electrodes 420 may overlapfirst electrodes 415, the second electrodes may be maintained physicallyseparated from each of the first electrodes 415. Each of the firstelectrodes 415 and each of the second electrodes 420 may be physicallyand/or electrically isolated from any other electrode of the plasmasource 310, which may allow independent operation of electrodesaccording to some embodiments of the present technology. Similar to theapertures, exemplary plasma sources according to embodiments of thepresent technology may include any number of first electrodes and secondelectrodes, including one or more, and which may include tens, hundreds,or thousands of electrodes in embodiments of the present technology.

First electrodes 415 may be coupled with a first power supply 417 andsecond electrodes 420 may be coupled with a second power supply 422 asillustrated. Either or both power supplies may be operated by controller191, or some other system controller as will be described below. Thecoupling may include the electrodes extending off the substrate in someembodiments, and/or may include extensions of the power suppliescontacting the electrode material on the source substrate. An additionalelectrical connection may be included on the opposite side of the sourcesubstrate from each power supply, or some other electrical coupling thatmay facilitate voltage delivery along each individual electrode. In someembodiments, first power supply 417 and second power supply 422 may be asingle power source providing a number of different outputs, as well asthe capability to provide different voltages across differently coupledelectrodes. Whether a single power source or multiple power sources, thepower sources may be electrically coupled with the electrodes to providevoltages across the electrodes. The power sources may have multiplexingcapabilities, which may allow a voltage to be applied to any individualelectrode coupled with the power supply, and which may afford deliveryof a single voltage or a range of voltages in some embodiments. In someembodiments first power supply 417 may be configured to deliver a firstvoltage along the one or more first electrodes 415, and the second powersupply 422 may be configured to deliver a second voltage along the oneor more second electrodes 420.

The voltages from either power supply may be in any range or mayencompass any voltage, although in some embodiments each of the firstpower supply and the second power supply may be configured to delivervoltages of less than or about 500 V along any electrode with which itmay be electrically coupled. The voltage delivered may be relative to abreakdown voltage between any overlapping first electrode and secondelectrode, as will be described further below. For example, althougheach power supply may deliver a similar voltage or any voltage within arange, in some embodiments the first power supply may be configured todeliver or provide a first voltage along each of the first electrodes,and the second power supply may be configured to deliver or provide asecond voltage along each of the second electrodes that may be less thanthe first voltage. Again, in some embodiments a single power supply maybe utilized which may be configured to deliver the separate voltages asdescribed. Accordingly, and as will be described further below, theelectrodes may be operated in both an addressing and sustaining functionin embodiments of the present technology to produce plasma dischargepulses within each individual plasma cell through the plasma source.Electrodes according to the present technology may be or include anynumber of conductive materials printed or formed across the sourcesubstrate. For example, copper, tungsten, molybdenum, nickel, iron,silver, cobalt, gold, or any other metal, including transition metals,may be used as electrodes in some embodiments of the present technology.A number of material combinations or alloys may similarly be used,including nickel-cobalt ferrous alloys, as one non-limiting example, aswell as these materials with an additional layer of conductive materialdeposited on one or more surfaces.

Turning to FIG. 5 is shown a partial schematic cross-sectional view ofexemplary plasma source 310 through line A-A of FIG. 4 according to someembodiments of the present technology. It is to be understood that thesource is not to be considered to any particular scale, and may includeany number of apertures and electrodes as previously described. Forexample, plasma source 310 may include a source substrate 405 having oneor more apertures 410 defined therethrough. Plasma source 310 may alsoinclude a set of first electrodes 415 and a set of second electrodes 420as illustrated. It is to be understood that any number of apertures andelectrodes may be included with plasma source 310 as described above.

As illustrated in the figure, plasma source 310 may include one or moreplates to produce source substrate 405 in some embodiments of thepresent technology. The plates may be adhered, bonded, sintered,mechanically joined, or otherwise coupled with one another to producethe plasma source 310. In some embodiments each plate of the one or moreplates may be the same material as all other plates in the source,although in some embodiments different materials may be used fordifferent plates. For example, in some embodiments a first plate 505 anda second plate 510 may be the same or different materials, and each offirst plate 505 and second plate 510 may be the same or differentmaterials from a third plate 515 disposed between the first plate andthe second plate. Any plate of source substrate 405 may be any of thematerials described previously.

As illustrated, plasma source 310 may include a number of platescoupled, or formed together to produce a monolith in some embodiments.Any of the plates may include a dielectric or ceramic material aspreviously described. Plasma source 310 may include a first platedefining one or more, including a first plurality, of apertures 506defined through the first plate. The apertures may be included in anynumber of arrangements as described previously, including in a first setof rows, with a single row being illustrated, with the additional rowsshown in FIG. 4 above. The first plate may also include one or more,including a first set, of electrodes 415, with one electrode 415 aillustrated in the cross section shown. The first set of electrodes 415may be distributed along the first set of rows, and each electrode ofthe first set of electrodes may intersect at least one of the aperturesof the first plurality of apertures 506.

Plasma source 310 may include a second plate 510 defining one or more,including a second plurality, of apertures 512 defined through thesecond plate. The apertures may be arranged in any number ofarrangements, including a second set of rows, which may be similar oridentical to the first set of rows in some embodiments. As illustrated,each second aperture 512 may be axially aligned or coaxial with a firstaperture 506, and in some embodiments second plate 510 may define thesame number of apertures as first plate 505. Plasma source 310 may alsoinclude a third plate 515 positioned between the first plate 505 and thesecond plate 510. Third plate 515 may define one or more, including athird plurality, of apertures 516. The third plate 515 may define thesame number of apertures as the other plates, and each third aperture516 may be axially aligned or coaxial with a corresponding firstaperture 506 and/or a corresponding second aperture 512. As illustrated,each axially aligned aperture of the first apertures 506, the secondapertures 512, and the third apertures 516 may form a channel thatextends through the plasma source 310. Each of these channels may be anindividual plasma cell, which may individually have plasma formed withinthe channel by operation of the electrodes.

Plasma source 310 may include one or more, including a second set, ofelectrodes 420, which may extend perpendicularly or at some otherangular offset from the first electrodes 415. Hence, electrodes 420 maybe extending through the page in the orientation illustrated, withelectrodes 420 a, 420 b, 420 c, 420 d, and 420 e illustrated in thecross section shown. The second set of electrodes 420 may be distributedalong the second set of rows, and each electrode of the second set ofelectrodes may intersect at least one of the apertures of the pluralityof second apertures 512. Each of the first electrodes 415 and each ofthe second electrodes 420 may separately extend along an individual rowacross the source substrate, and may be formed in stripes, which maylimit or prevent contact between any two electrodes across the plasmasource. Hence, with each plate of the source being a dielectric materialin some embodiments, each electrode may be electrically, and orphysically, isolated from each other electrode on the substrate. Ofcourse, any amount of electrical coupling may occur at the powersupplies in some configurations encompassed by the present technology.

In some embodiments one or more additional plates may be included withthe plasma source, and which may encase or protect aspects of the plasmasource in some embodiments of the present technology. For example, afourth plate 517 may be coupled with a surface of the first plate 505opposite a surface of the first plate 505 coupled with the third plate515. Fourth plate 517 may define one or more, including a fourthplurality, of apertures 518, which may be axially aligned with theapertures of the first plate 505 and the second plate 510. A fifth plate519 may be coupled with a surface of the second plate 510 opposite asurface of the second plate 510 coupled with the third plate 515. Fifthplate 519 may define one or more, including a fifth plurality ofapertures 521, which may be axially aligned with the apertures of thefirst plate 505 and the second plate 510. Fourth plate 517 and fifthplate 519 may be made from any of the materials previously described,and may be the same or different materials from any of the other plates.The plates may provide physical and or chemical protection to the otherplates of the plasma source during semiconductor processing.Additionally, in some embodiments, fourth plate 517 and fifth plate 519may be a coating applied along the first plate and third plate, whichmay be a dielectric or other protective coating, which may be spraycoated or otherwise applied across the plasma source.

As described previously, first electrodes 415 and second electrodes 420may be formed on different planes through the plasma source, which mayprevent shorting between the electrodes. For example, first electrodes415 may be formed on a first surface of the first plate 505, and secondelectrodes 420 may be formed on a first surface of the second plate 510.Although illustrated above the plates, it is to be understood thatelectrodes according to the present technology may be on the order ofseveral micrometers or less, and may be fully contained by a platecovering the electrodes. Additionally, in some embodiments trenches maybe formed in the first surface of the first plate 505 and the secondplate 510 in a location corresponding to each row or pattern, and anelectrode material may be formed or deposited within the trenches.

For operation during plasma processing, the electrodes may furtherextend along sidewalls of the apertures intersected by each electrode,which may maintain continuity along each electrode through eachaperture, and may facilitate formation of the individual plasma cells.Accordingly, each electrode may include an annular component extendingabout an interior of each aperture intersected by the electrode. Asshown in the figure, first electrode 415 a, along with each other firstelectrode 415, may extend along a first surface of first plate 505, andmay further extend along the sidewalls of each aperture 506 formedthrough the plate and intersected by the associated electrode 415.Similarly, second electrodes 420, including each individual secondelectrode illustrated, may extend along a surface of the second plate510, and may further extend along the sidewalls of each aperture 512formed through the plate and intersected by the associated electrode420. The electrode material may extend fully or partially through theapertures, and in some embodiments may uniformly be formed through theapertures from the first surface of the plate along which the electrodeis formed, to a second surface opposite the first. The electrodematerial may also be formed to any thickness within the apertures,including to a thickness of less than or about 100 µm, and may be formedto a thickness of less than or about 80 µm, less than or about 60 µm,less than or about 50 µm, less than or about 40 µm, less than or about30 µm, less than or about 20 µm, less than or about 10 µm, less than orabout 5 µm, or less. The separation between the first electrode 415 andthe second electrode 420 within each channel or plasma cell may becontrolled by the thickness of plate 515. This gap may define a spacefor electrical discharge between the two electrodes.

In embodiments of the present technology any of the plates of source 310may be characterized by a thickness of less than or about 1 cm, and maybe characterized by a thickness of less than or about 9 mm, less than orabout 8 mm, less than or about 7 mm, less than or about 6 mm, less thanor about 5 mm, less than or about 4 mm, less than or about 3 mm, lessthan or about 2 mm, less than or about 1 mm, less than or about 0.5 mm,or less. For example, third plate 515 may be sized to a thicknessaccording to a pressure regime in which the plasma source may beoperated at a particular voltage. For example, in one non-limitingexample, a plasma source operated at a voltage between about 100 V andabout 300 V, and at a pressure of from about 5 Torr to about 50 Torr,may include a third plate characterized by a thickness of between about3 mm and about 5 mm in some embodiments.

To facilitate operation as plasma generating electrodes, a dielectricmaterial may be formed overlying the electrode material in someembodiments. Although the dielectric material may be formed fully overthe electrode material across a plate of the plasma source, in someembodiments the dielectric material may be formed overlying electrodematerial extending along sidewalls of each aperture of the plate asillustrated. For example, a first dielectric material 525 may be formedoverlying electrode material formed along sidewalls of each aperturethrough first plate 505. Additionally, a second dielectric material 530may be formed overlying electrode material formed along sidewalls ofeach aperture through second plate 510. The first dielectric material525 and the second dielectric material 530 may be the same or differentmaterials, and may be any of the dielectric materials previouslydescribed. The dielectric materials may also be formed to any of thethickness described elsewhere for electrodes, apertures, or any otherthickness or dimension noted. It is to be understood that although thefigure illustrates the dielectric material contained within theaperture, to illustrate the continuity of the electrode stripes, in someembodiments the dielectric material may extend about any exposedelectrode material through the channels or plasma cells of the source,and thus in some embodiments no portion of the electrode materials maybe exposed through the apertures 410 extending through the source.

In some embodiments the dielectric materials may be the same materialsof the corresponding plate, although in some embodiments the dielectricmaterial may be different from the plate material. As one non-limitingexample, first plate 505 may be formed of a first dielectric material,such as aluminum oxide, and dielectric material 525 may be a differentdielectric material, such as magnesium oxide, although any of thepreviously noted materials may be utilized for any of the materials ofany plate or dielectric material, although the material selected andthickness to which the dielectric material is formed may affect thevoltage at which breakdown may occur for generating an electricaldischarge within the plasma cell. By providing a first voltage across afirst electrode, and by providing a second voltage across a secondelectrode overlapping the first electrode at a particular channel orplasma cell formed through the source, an electrical discharge may beformed within the plasma cell, which may afford plasma excitation of aprecursor delivered through the aperture. Operation of the plasma cellswill be described further below.

FIG. 6 shows a schematic cross-sectional view of an exemplary plasmasource 600 according to some embodiments of the present technology.Plasma source 310 described above illustrated a configuration of atwo-dimensional electrode configuration encompassed by some embodimentsof the present technology. Additional plasma sources encompassed by thepresent technology may include a one-dimensional electrodeconfiguration, a three-dimensional electrode configuration, or anynumber of configurations including additional electrodes. For example,plasma source 600 may illustrate a three-electrode plasma source, whichmay include multiple sustain electrodes with an addressing electrodeformed there between.

Plasma source 600 may include any of the features, characteristics, orcomponents of any plasma source previously described, including plasmasource 310. Similarly, plasma source 600 may be included in any systemor processing chamber previously described, as well as any otherprocessing chamber in which plasma processing may be performed. Plasmasource 600 may include an arrangement similar to plasma source 310, insome embodiments, with an additional plate of the plasma source, andhaving an additional electrode, incorporated with the source. Forexample, plasma source 600 may include a first plate 605, a second plate610, and a third plate 615 coupled together. A fourth plate 620 may bedisposed between the first plate 605 and the second plate 610, and afifth plate 625 may be disposed between the second plate 610 and thethird plate 615. An additional sixth plate 630 and a seventh plate 632,which may additionally be coatings, may be included encompassing theother plates, such as coupled with opposite ends of the first plate andthird plate as illustrated, and which may provide protection orenclosure of the plasma source.

A first electrode 606, or first set of electrodes, may extend across thefirst plate in a first direction, or first arrangement, intersecting oneor more apertures through the plate. A second electrode 612, or secondset of electrodes, may extend across the second plate in a seconddirection which may be perpendicular to the first direction, or secondarrangement, intersecting one or more apertures through the plate.Additionally, a third electrode 616, or third set of electrodes, mayextend across the third plate in the first direction such as similar tothe direction along the first plate, or third arrangement, intersectingone or more apertures through the plate. In this arrangement, each ofthe first electrode and third electrode formed in parallel may operateas a sustain electrode, which may provide additional electricalefficiency during operation of the plasma source.

FIG. 7 shows a schematic top view through an exemplary cell of a plasmasource 700 according to some embodiments of the present technology, andmay illustrate the layered components for the electrode through theaperture. Plasma source 700 may include any of the features,characteristics, or components of any plasma source previouslydescribed, including plasma source 310. Similarly, plasma source 700 maybe included in any system or processing chamber previously described, aswell as any other processing chamber in which plasma processing may beperformed.

As illustrated, plasma source 700 may include a source substrate 705through which an aperture 710, or plasma cell, may be defined. A firstelectrode 715 may extend along a first surface, such as along a firstplate, of plasma source 700, and may be included within the source asdescribed above, such as formed between plates, or encompassed bydielectric material. First electrode 715 may extend in a stripe alongthe source, and may be one of a number of electrodes included across thesource. A second electrode 720 may extend along a second surface of thesource, including within the source as described above, or encompassedwithin dielectric material. The electrodes may be formed in differentplanes, including along different portions of the aperture 710 formedthrough the source. As illustrated, electrode 715, and similarlyelectrode 720, may extend along a surface of the source, as well asalong sidewalls of the aperture 710 formed through the substrate. Theelectrodes may then include an annular component extending along theapertures to provide a continuity along each aperture intersected by theelectrode.

As previously described, a dielectric material 725 may be formed overportions of the electrode formed along sidewalls of the aperture 710.The dielectric material may facilitate dielectric barrier dischargebetween the first electrode 715 and the second electrode 720 within theaperture through the source. Although illustrated along only theinterior sidewalls overlying the electrode material, where the electrodematerial is disposed between the source substrate 705 and the dielectricmaterial 725, it is to be understood that in some embodiments thedielectric material may extend outside of the aperture, and may overlythe entire annular portion of the electrode to limit or prevent exposureof any electrode material within the aperture or plasma cell.

FIG. 8 shows a schematic cross-sectional view of an exemplary plasmasource 800 according to some embodiments of the present technology, andmay illustrate variations in aperture profiles through the source.Plasma source 800 may include any of the features, characteristics, orcomponents of any plasma source previously described, including plasmasource 310. Similarly, plasma source 800 may be included in any systemor processing chamber previously described, as well as any otherprocessing chamber in which plasma processing may be performed.

Plasma source 800 may include features similar to plasma source 310 asillustrated in FIG. 5 above, and may include some or all of thosecomponents, including a first plate 805 through which first apertures806 may be defined, a second plate 810 through which second apertures812 may be defined, and a third plate 815 through which third apertures816 may be defined. A set of first electrodes 807 may extend across asurface of first plate 805, and a set of second electrodes 813 mayextend across a surface of second plate 810. As noted previously, eachfirst aperture may be coaxial with an associated second aperture andthird aperture to define a channel or plasma cell through the source800. Any of the apertures of any of the plates may be characterized byany of the aperture diameters described above, and in some embodiments,at least one of the plates may define apertures of a different diameterof one or all of the other plates of the source.

For example, source 800 illustrates two additional aperture profiles,which may be included separately or in combination with any otheraperture profile through sources encompassed by embodiments of thepresent technology, and may illustrate embodiments of aperture profilesfor any plasma source described throughout the present disclosure. Forexample, both aperture profiles include plasma cells where the firstapertures 806 are characterized by a first diameter, and where thirdapertures 816 are characterized by a second diameter different from thefirst. As illustrated in the first example encompassed by the figure,third apertures 816 a are characterized by a diameter less than adiameter of first apertures 806. By effectively increasing the amount ofmaterial formed between first electrode 807 and second electrode 813,the source may be configured to operate at lower pressure regimes, whichmay extend below or about 5 Torr in some embodiments. Additionally,increasing the gap distance may increase the voltage to discharge withinthe plasma cell.

In the second example encompassed by the figure, third apertures 816 bare characterized by a diameter greater than a diameter of firstapertures 806. Additionally, electrode material 807 may extend across afirst surface of first plate 805 as illustrated, and in the stripesdescribed previously. Electrode material 807 may also extend across asecond surface of first plate 805 opposite the first surface, such aswithin the gap between the first plate and the second plate occupied bythe third plate. Similarly, electrode material 813 may be formed along afirst surface of second plate 810, and may be formed in an increasedannular lip or extension about the apertures 812 as illustrated. Theextension of both the first electrode material 807 and the secondelectrode material 813 may occur to the same extent on the facingsurfaces. Additionally, dielectric material 820 formed through the firstapertures 806, and dielectric material 822 formed through the secondapertures 812, may further extend about the additional electrodematerial as illustrated.

For example, the dielectric material may extend within the gap overlyingthe additional electrode material to limit or prevent exposure of eitherelectrode, which may occur on the first surface of the first plate aswell to limit or prevent exposure of electrode material within theplasma cell. By effectively reducing the amount of material and the gapformed between first electrode 807 and second electrode 813, the sourcemay be configured to operate at higher pressure regimes, which mayextend above or about 5 Torr in some embodiments, and may extend topressures greater than or about 10 Torr, greater than or about 15 Torr,greater than or about 20 Torr, greater than or about 25 Torr, greaterthan or about 30 Torr, greater than or about 35 Torr, greater than orabout 40 Torr, greater than or about 45 Torr, greater than or about 50Torr, or higher. Additionally, increasing the gap distance may reducethe voltage to discharge within the plasma cell in some embodiments.

The previously described sources may be operated to produce plasmaenhanced precursors for use in semiconductor processing. The plasmacells formed through the sources may allow independently developedplasma profiles that can impact the substrate-level performance of theprocess being produced. By utilizing addressing and sustaining plasmafunctions at each plasma cell, and by adjusting the number of plasmapulses occurring at each cell during the sustaining functions, theamount of deposition material, etchant, or treatment material producedin each plasma cell through the source may be specifically tailored toimprove process uniformity at the substrate level.

FIG. 9 shows selected operations in a method 900 of processing asemiconductor substrate according to some embodiments of the presenttechnology. The method may be performed in a variety of processingchambers, including processing system 300 described above, which mayinclude plasma sources according to embodiments of the presenttechnology, such as any component, configuration, or characteristic ofany plasma source discussed previously. Method 900 may include a numberof optional operations, which may or may not be specifically associatedwith some embodiments of methods according to the present technology. Anexemplary etching process may be described in conjunction with theoperations of method 900 for ease of understanding, although it is to beunderstood that the process is not intended to be limiting, and anynumber of etching, deposition, treatment, or cleaning operations maysimilarly be performed according to method 900 and variations similarlyencompassed by the present technology.

The method 900 may be performed in a processing chamber including aplasma source as previously described. The plasma source may include oneor more apertures through the source, as well as a set of firstelectrodes, and a set of second electrodes. One or more power suppliesmay be included and configured to deliver a first voltage along eachelectrode of the set of first electrodes, and deliver a second voltagealong each electrode of the set of second electrodes. In the exemplaryembodiment, the source may be formed with electrode and dielectricmaterials and thicknesses to produce an electrical discharge within eachplasma cell at 250 V. It is to be understood that these materials andconfigurations may be adjusted to produce discharge within any range ofvoltages as previously described. Additionally, although the powersupplies may be configured to deliver any voltage within a range ofvoltages as previously described, each power supply may be specificallyconfigured to deliver a voltage that is less than the voltage at whichelectrical discharge may occur within each cell at the specifiedoperating conditions. The power supplies may also be configured incombination to deliver a voltage that together may be greater thanvoltage at which electrical discharge may occur.

Continuing the non-limiting example, the first power supply may beconfigured to deliver a first voltage that may be less than or about 250V, and may be 200 V, although any number of other voltages within thisrange may be selected. The first electrodes may be sustain electrodes,for example. Additionally, the second power supply may be configured todeliver a second voltage that may be less than or about 250 V, and maybe 80 V, although any number of other voltages within this range may beselected. The second electrodes may be address electrodes, for example.Accordingly, when either power supply delivers a voltage along aparticular electrode, there may be no discharge effect within anyindividual plasma cell. However, when an overlapping electrode similarlyreceives a voltage, the plasma cell or channel at which the electrodesoverlap, may receive a voltage greater than the voltage at whichdischarge may occur between the two electrodes, and a hence, electricaldischarge may occur within that cell, without occurring in any othercell along either electrode, for example. By coordinating delivery ofpower along each of the first electrodes, and each of the secondelectrodes, plasma may be independently produced within each channel orplasma cell of the source.

The control scheme for producing the plasma may occur by using acontrol, such as a system controller as previously described to addresseach plasma cell of the source, and then sustaining the cells under apulsing scheme that may produce the processing profile on the substrateas desired. Addressing cells may involve providing a voltage along thecorresponding electrodes that provides a net voltage above the cellbreakdown voltage. For example, at optional operation 905, a firstvoltage, such as 200 V in the example, may be delivered along each ofthe first electrodes, similar to a scan function of a multiplexer.Additionally, at optional operation 910, a second voltage, such as 80 Vin the same example, may be delivered along selected second electrodes,including all electrodes, to exceed the breakdown voltage at each cellwhere the electrodes receiving voltage overlap. This may be performedwith a precursor for a subsequent processing operation, an inertprecursor or carrier precursor, or within the environment of theprocessing chamber. Accordingly, at least some overlap between voltagedelivered along first electrodes and voltage delivered along secondelectrodes may occur to produce a discharge in one or more plasma cells,including all plasma cells, of the source.

When discharge occurs within a particular plasma cell during theaddressing operation, a surface charge remains on the dielectric layersof the two electrodes. This surface charge may be less than the cellbreakdown voltage, but may be greater than the difference between thecell breakdown voltage and the voltage provided along the sustainelectrodes. A precursor for semiconductor processing may be delivered atoperation 915, and may be delivered into a semiconductor processingchamber incorporating a plasma source, such as any plasma sourcedescribed throughout the present disclosure. The precursor may flowthrough the chamber and may be distributed through the channels orplasma cells of the plasma source, which may also be a gas distributionplate, before being delivered to the processing region to interact witha substrate. As the precursor is being delivered through the plasmacells of the source, the first power supply may deliver the firstvoltage, such as 200 V continuing the example, along the firstelectrodes, or sustain electrodes, at operation 920. The voltage due tothe memory charge on the dielectric surfaces within the plasma cells ofthe source that were previously addressed may then add to the appliedvoltage of the sustain electrodes, which may again exceed the cellbreakdown voltage, causing an additional discharge pulse of plasma onlywithin the cells that were addressed previously. This may form plasmawithin the individual channels or plasma cells through the plasma sourceat operation 925, and which may produce a plasma enhanced precursor asit flows through the source. The precursor, which may include one ormore precursors, may then interact with the substrate to perform thesubstrate processing.

If all plasma cells are characterized by similar dimensions, and thevoltage applied across each electrode is the same, the plasma powerproduced within each cell may be proportional to a number of dischargepulses occurring within each cell during a cycle of operation. At eachcycle, the individual plasma cells may be reset, and then re-addressed,which may adjust the cells receiving a memory charge. When a cell doesnot receive a memory charge in the addressing cycle, the cell will notdischarge during the subsequent sustain cycles. Because cycles can occurin milliseconds or microseconds, the number of pulses that may occur ateach cell during a processing operation of a few seconds or a fewminutes, may be hundreds, thousands, tens of thousands, or hundreds ofthousands of pulses of plasma. Consequently, by tuning the number ofpulses that a particular cell receives, the process being performed on asubstrate may be tuned in a feed-forward loop.

For example, a process, such as an etching process may be performed on asubstrate housed in a chamber incorporating a plasma source aspreviously described. It is to be understood that exemplary deposition,treatment, cleaning, or other operations may similarly be performed. Theetching process may occur over a period of time, during which the plasmacells may be operated so that each plasma cell discharges a certainnumber of times during the period of time. As one non-limiting example,each plasma cell may be operated to discharge 10,000 times during theperiod of time, although any number of pulses may be configured based atleast in part on the frequency of the power supply. Theoretically, theetch process performed should occur uniformly across the substrate, butthis does not always occur. For example, due to non-uniformity of flowof precursors within the processing chamber, non-uniformity oftemperature distribution across the substrate, or any other number offactors, the etch process may produce a profile across the substrate.

Subsequent performance of the etch process, a metrology or otheranalysis may be performed to identify any non-uniformity of the process,such as an edge-high profile, a center-high profile, a radial or planarnon-uniformity, or some combination of these issues. For example,analysis may determine that etching was performed more readily in thecenter of the substrate than on the edges producing an edge-highprofile. In response, processing may be adjusted to either reduce thecenter etching, increase the edge etching, or both. By adjusting thenumber of discharge pulses per plasma cell of the plasma source,increased or reduced etchant precursor may be produced through differentregions of the plasma source, which may provide the changes sought.

To produce these effects in the source, the addressing scheme may bemodified for the plasma cell. For example, while every plasma cell inthe source may still be operated throughout the processing time, thenumber of discharge pulses produced in each cell may be adjusted throughan addressing scheme. To produce the addressing scheme, for example, anumber of subfields may be produced as a set of frames throughout theprocessing time. A digital controller or aspect of a system controllermay produce the addressing and sustaining scheme for each subfield andframe across the processing time period. At the beginning of eachsubfield time period, each plasma cell may be addressed as previouslydescribed to maintain or lose a memory charge. During the subsequentsustain pulses, for each subfield time period, only the cellsmaintaining a memory charge may be further discharged, which may allowan adjustment to the plasma intensity within each plasma cell duringeach frame of the processing time.

Continuing the etching example above, by increasing the number ofdischarge pulses at plasma cells about an external periphery of theplasma source, and/or by reducing the number of discharge pulses atplasma cells about a central region of the plasma source, the plasmaintensity may be relatively increased at a radial edge of the processingregion, and the plasma intensity may be relatively reduced at centralregion of the processing region. This may increase etching at an edgeregion, and may reduce etching at a center region. In terms of pulses,each cell across the source may continue to receive greater than orabout 50% of the total number of pulses producible during an operationaltime period, and may continue to receive greater than or about 60% ofthe total number of pulses, greater than or about 70% of the totalnumber of pulses, greater than or about 80% of the total number ofpulses, greater than or about 90% of the total number of pulses, greaterthan or about 95% of the total number of pulses, greater than or about99% of the total number of pulses, or more, depending on the variationsought in the process being performed.

For example, while plasma cells at a mid-region of the source mayreceive 9,000 discharge pulses across the processing time, plasma cellsat the central region of the source may receive 8,000 discharge pulsesacross the processing time, and plasma cells at the radial edge regionof the source may receive 10,000 discharge pulses across the processingtime. Of course, any number of variations across the source andindividual plasma cells is similarly encompassed, as each individualcell may be independently tuned across the source to provide complexplasma profiles that may accommodate process non-uniformity from anynumber of sources.

For example, processing of the imaging data and subsequent adjustmentsto addressing schemes that overcome or accommodate non-uniformity ofprocesses may be used to generate or initiate a library of results oroutcomes that may facilitate future processes. This generated librarymay be accessed by a processor for machine learning, where an algorithmmay be implemented to identify patterns from processing scenarios, whichmay provide a machine learning model to facilitate predictiveadjustments to processing or chamber conditions. Algorithms may includeconsideration of chamber conditions, process conditions, materials orproperties for components of the system, addressing schemes, effect onprocessing per adjustments to discharge pulses, among any number ofother considerations that may be collected during processing andanalyzed to train the machine learning model. Deep machine learningalgorithms may be developed for pulsing schemes or addressing operationsbased on the number of plasma cells within a particular source.

The machine learning may further populate the data library anditeratively improve predictions for any number of chamber or processingscenarios. Consequently, over time the model may control processing bypredicting effects based on previously received or modeled image data ofprocessing and adjustments to total number of discharge pulses forindividual plasma cells, and may adjust any number of processingparameters in situ to increase or decrease discharge pulses for eachplasma cell across the plasma source, and improve process outcomes anduniformity of operations. By utilizing individually addressable plasmacells in a plasma source according to some embodiments of the presenttechnology, improved plasma processing may be performed at higherpressure and lower voltage than with many conventional processingchambers.

One or more computing devices or components may be adapted to providesome of the desired functionality described throughout by accessingsoftware instructions rendered in a computer-readable form. Thecomputing devices may process or access signals for operation of one ormore of the components of the present technology, such as the addressingindividual cells across the plasma source during each subfield of eachframe of processing time, for example. When software is used, anysuitable programming, scripting, or other type of language orcombinations of languages may be used to perform the processesdescribed. However, software need not be used exclusively, or at all.For example, some embodiments of the present technology described abovemay also be implemented by hard-wired logic or other circuitry,including but not limited to application-specific circuits. Combinationsof computer-executed software and hard-wired logic or other circuitrymay be suitable as well.

Some embodiments of the present technology may be executed by one ormore suitable computing device adapted to perform one or more operationsdiscussed previously. As noted above, such devices may access one ormore computer-readable media that embody computer-readable instructionswhich, when executed by at least one processor that may be incorporatedin the devices, cause the at least one processor to implement one ormore aspects of the present technology. Additionally or alternatively,the computing devices may include circuitry that renders the devicesoperative to implement one or more of the methods or operationsdescribed.

Any suitable computer-readable medium or media may be used to implementor practice one or more aspects of the present technology, including butnot limited to, diskettes, drives, and other magnetic-based storagemedia, optical storage media, including disks such as CD-ROMS, DVD-ROMS,or variants thereof, flash, RAM, ROM, and other memory devices, and thelike.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “an electrode” includes aplurality of such electrodes, and reference to “the plasma cell”includes reference to one or more plasma cells and equivalents thereofknown to those skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

1. A plasma source comprising: a first plate defining a first pluralityof apertures arranged in a grid, wherein the first plate comprises afirst set of electrodes, each electrode of the first set of electrodesextending along a separate row of the grid and connecting two or more ofthe first plurality of apertures; a second plate adapted to be exposedto a process space of a process chamber within which the plasma sourceis arrangeable and defining a second plurality of apertures arranged inthe grid, wherein the second plate comprises a second set of electrodes,each electrode of the second set of electrodes extending along aseparate column of the grid and connecting two or more of the secondplurality of apertures, and wherein each aperture of the secondplurality of apertures is axially aligned with an aperture of the firstplurality of apertures; and a third plate positioned between the firstplate and the second plate and separating the first plate from thesecond plate, wherein the third plate defines a third plurality ofapertures, each aperture of the third plurality of apertures axiallyaligned with an aperture of the first plurality of apertures and anaperture of the second plurality of apertures, wherein an inner surfaceof each of the first and second pluralities of apertures is insulatedfrom a plasma generatable within the aperture by a dielectric layer, andwherein the third plate is an insulator that insulates the first platefrom the second plate.
 2. The plasma source of claim 1, wherein eachaxially aligned aperture of the first plurality of apertures, apertureof the second plurality of apertures, and aperture of the thirdplurality of apertures forms a plasma cell extending through the plasmasource.
 3. The plasma source of claim 1, further comprising: a firstpower supply electrically coupled with each electrode of the first setof electrodes, the first power supply configured to deliver a firstvoltage along each electrode of the first set of electrodes.
 4. Theplasma source of claim 3, further comprising: a second power supplyelectrically coupled with each electrode of the second set ofelectrodes, the second power supply configured to deliver a secondvoltage along each electrode of the second set of electrodes.
 5. Theplasma source of claim 4, wherein the first power supply and the secondpower supply are configured to produce an electrical discharge within aplasma cell positioned at an overlapping electrode of the first set ofelectrodes and an electrode of the second set of electrodes eachreceiving power.
 6. The plasma source of claim 1, wherein each apertureof the first plurality of apertures is characterized by a firstdiameter, and wherein each aperture of the third plurality of aperturesis characterized by a second diameter different from the first diameter.7. The plasma source of claim 1, wherein each electrode of the first setof electrodes is maintained electrically isolated from each otherelectrode of the first set of electrodes along a surface of the firstplate.
 8. The plasma source of claim 1, wherein each electrode of thefirst set of electrodes extends along a first surface of the firstplate, and wherein each electrode of the first set of electrodes furtherextends along sidewalls of each aperture of the first plurality ofapertures intersected by an associated electrode.
 9. The plasma sourceof claim 1, further comprising: a layer of dielectric material overlyingelectrode material extending along sidewalls of each aperture of thefirst plurality of apertures.
 10. The plasma source of claim 1, whereinthe first set of electrodes extend into apertures of the first pluralityof apertures and the second set of electrodes extend into apertures ofthe second plurality of apertures.
 11. The plasma source of claim 1,wherein the first set of electrodes are formed in a surface of the firstplate and the second set of electrodes are formed in a surface of thesecond plate.
 12. The plasma source of claim 1, wherein the first set ofelectrodes are formed in at least one first trench defined by a surfaceof the first plate and the second set of electrodes are formed in atleast one second trench defined by a surface of the second plate. 13.The plasma source of claim 1, wherein a thickness of the third platecontrols a distance between the first set of electrodes and the secondset of electrodes.
 14. The plasma source of claim 1, wherein dielectricmaterial of each of the first plate and the second plate fully coverselectrode material across surface of the respective plate.
 15. Theplasma source of claim 1, wherein a dielectric material is formed overportions of the first set of electrodes formed along sidewalls ofapertures of the first plurality of apertures and the dielectricmaterial is formed over portions of the second set of electrodes formedalong sidewalls of apertures of the second plurality of apertures. 16.The plasma source of claim 1, wherein each aperture of the first andsecond plurality of apertures is characterized by a first diameter andeach aperture of the third plurality of apertures is characterized by asecond diameter different from the first diameter.
 17. The plasma sourceof claim 1, wherein the first electrodes are arranged at an angularoffset from the second electrodes.
 18. A dielectric barrier discharge(DBD) plasma source comprising: a flat, grid-like arrangement of aplurality of cells each configured to allow a feed gas to flow throughthe cell from a gas distribution volume toward a processing chamber whenthe DBD plasma source is arranged between the gas distribution volumeand the process chamber; wherein each cell is adapted to be energized togenerate plasma in an aperture defined within the cell; wherein eachcell includes: at least a first electrode and a second electrodeseparated by a fixed gap, the first electrode being insulated from thesecond electrode, and an inner surface insulating the first electrodeand the second electrode from the aperture, the inner surface beingcontactable with a generated plasma within the aperture; wherein thefirst electrode of each cell is connected with the first electrode ofcells from the plurality of cells arranged in a row of the grid; andwherein the second electrode of each cell is connected with the secondelectrode of cells from the plurality of cells arranged in a column ofthe grid.
 19. The dielectric barrier discharge (DBD) plasma source ofclaim 18, wherein the row of the grid and the column of the grid areperpendicular to each other.
 20. The dielectric barrier discharge (DBD)plasma source of claim 18, wherein the row of the grid and the column ofthe grid form an acute angle relative to each other.